岳航羽

The impact of HfO2 dielectric layers deposited at different temperatures on performance and reliability of hydrogen-terminated single-crystal diamond MOSFETs

Gate dielectric plays a critical role in determining the electrical performance and stability of hydrogen-terminated diamond (H-diamond) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). This work systematically investigates the influence of HfO 2 dielectric layers de...