Istiaq Firoz Shiam

p- and n-Type doping of AlN: Current challenges, emerging solutions, and device applications

Ultrawide bandgap aluminum nitride (AlN) has recently gained significant attention for high-power electronics and deep-ultraviolet (DUV) optoelectronics applications owing to its exceptionally large and direct bandgap, high breakdown field, and thermal and chemical stability. Whi...