Ibrahim Isah

Heteroepitaxial Growth of High-Mobility Ge-Doped β -Ga2O3 Films on Sapphire Substrate by Low-Pressure CVD

Abstract In this work, high-quality Ge-doped (2̅01) β-Ga2O3 thin films were heteroepitaxially grown on c-plane sapphire substrates with offcut angles of 0°, 2°, 6°, and 8° using low-pressure chemical vapor deposition (LPCVD). Increasing the sapphire offcut promoted step-flow grow...