Hyun‐Yong Yu

Spatially Complementary In‐Plane Lattice Strain Engineering for Reduced Contact Resistance and Enhanced Ferroelectric Switching in Van Der Waals α‐In 2 Se 3 Ferroelectric Semiconductor Field‐Effect Transistors

ABSTRACT α‐In 2 Se 3 ferroelectric semiconductor field‐effect transistors (FeS‐FETs) offer attractive non‐volatile memory characteristics but are limited by high source/drain (S/D) contact resistance and inefficient ferroelectric polarization switching. Here, we demonstrate a low...