Hwan Jin Kim

Comparative analysis of proton collision effects in silicon on insulator MOSFETs using steady-state and transient responses

Proton irradiation degrades MOSFETs through multiple, spatially distinct mechanisms, yet separating the dominant damage sites remains challenging. This work presents a region-resolved electrical study of proton-irradiated partially depleted silicon-on-insulator (PDSOI) nMOSFETs,...