Huamin Li

Decoupled Channel and Contact Modulation in α-In2Se3/ZrO2/Hf0.5Zr0.5O2 Dual-Ferroelectric Field-Effect Transistor

Abstract Ferroelectric field-effect transistors (FeFETs) utilizing either a ferroelectric dielectric (FeD) or a ferroelectric semiconductor (FeS) are highly promising for neuromorphic computing. While integrating FeD with emerging FeS could provide new degrees of freedom for syna...