Hsin-Wei Huang

High current ultrawide bandgap AlGaN pin diodes with low on-resistance and UVC emission

We report ultrawide-bandgap AlGaN pin diodes with high forward current density and deep-ultraviolet (DUV) electroluminescence signaling efficient carrier injection. The devices incorporate a 100 nm unintentionally doped intrinsic layer between polarization-doped n- and p-type reg...