Hongwei Liang

High mobility p -type doping of hexagonal boron nitride films on diamond (100) substrates

The heteroepitaxy of hexagonal boron nitride (h-BN) on diamond exhibits significant potential for the advancement of diamond-based electronic devices. p-Type doping of h-BN is expected to provide sufficient carriers for forming a two-dimensional hole gas at the diamond interfaces...

Highly Anisotropic Quasi-1D δ-CsPbI3 Single Nanowire Decorated with Au Nanoparticles for Polarization-Sensitive Photodetection

The development of polarization-sensitive photodetectors based on low-dimensional materials with intrinsic lattice anisotropy has paved the way for next-generation polarizer-free and integration-friendly polarization-sensitive optoelectronic devices. Despite their superiority in...