Hongta Yang

Sequential Channel Activation in Multi-Channel AlGaN/AlN/GaN HEMTs: From 4-Channel to Double-Sided 5-Channel Configurations

Abstract This study investigates the critical impact of channel scaling on the performance of AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) by comparing a 4-channel stack structure and a 5-channel double-sided channel structure. While multi-channel designs are intended...