Hongping Zhao

MOCVD Growth of (011) β-Ga2O3 Films: Defect Control and Device Implication

Abstract β-Ga2O3 is a promising ultrawide-bandgap semiconductor for high-power electronics; however, the realization of thick, low-defect drift layers at high growth rates remains challenging. In this work, metalorganic chemical vapor deposition (MOCVD) growth of (011) β-Ga2O3 dr...