H.L. Bai

Self-Aligned AlO x Spacer Enabling 10 nm-Scaled InZnSnO Thin-Film Transistors for 2T0C DRAM

Abstract Oxide semiconductors are promising for low-power dynamic random access memory (DRAM) due to their ultralow off-state leakage and back-end-of-line compatibility. Continued transistor scaling is essential to further enhance electrical performances, however, conventional li...