Hanna Paddubrouskaya

Controlled SiO2 etching by HF in an HF/H2O liquid-like layer in a vacuum environment

Controlled SiO2 etching was demonstrated using hydrogen fluoride (HF) in an HF/H2O liquid-like layer in a vacuum environment. Under vacuum conditions in the absence of H2O, there was no etching of SiO2 by HF. In the presence of H2O, the SiO2 etch rates were dependent on the HF pr...