Hai‐Shan Zhang

Doping-Free Cold-Source Contacts for BSb/InSe van der Waals Transistors with Sub-60 mV/Decade Subthreshold Swing

The relentless scaling of transistors has intensified power dissipation challenges in modern integrated circuits, necessitating devices that operate below the fundamental Boltzmann limit of 60 mV/dec subthreshold swing (SS). Here, we propose a cold-source field-effect transistor...