Hoi Wai Choi

Microscopic Understanding of V-Shaped Pits Induced Quantum Barriers and Localized-State Luminescence in High-Indium-Content InGaN/GaN Multiple-Quantum-Well LEDs

Abstract In this study, microstructural characterization with high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), variable-temperature steady-state and time-resolved photoluminescence (PL), PL-excitation spectral measurements, and calculations ba...

Intensity-StableWavelength Tuning in InGaN/GaN MultipleQuantum Wells

Abstract Dynamic tuning of emission from III-nitride multiple quantum wells (MQWs) without significant intensity variation is a highly desirable feature as the emission wavelength from MQWs is generally fixed. This work demonstrates a three-terminal InGaN/GaN field-effect light-e...