H H Liu

Overcoming the mobility–reliability trade-off in BEOL-compatible In2O3-based FETs through synergistic doping and prolonged annealing

Oxide semiconductors field-effect transistors (OS FETs) capable of simultaneously delivering high mobility and excellent reliability are a key platform for high-performance circuits and memory modules in monolithic three-dimensional integrated circuits (M3D ICs). In this work, we...