Guanjun Jing

Composite Crystalline Aluminum Nitride Passivation for Near-Junction Thermal Management in Gallium Nitride High-Electron-Mobility Transistors

In this work, we demonstrate a composite crystalline aluminum nitride (AlN) passivation layer for near-junction thermal management in aluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs). The 120-nm-thick AlN film consists of an ordered...