Gi-Beom Park

High-Pressure Deuterium Annealing Enables Robust Trap Passivation in ALD HfO2/Si MOS Capacitors under High-Temperature Bias Stress

Abstract The continuous scaling down of semiconductor devices has driven the replacement of SiO2-based gate insulators with HfO2 deposited via atomic layer deposition (ALD) to mitigate the leakage current induced by direct tunneling. However, HfO2 thin films deposited via ALD con...