Fabrizio Roccaforte

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H‐SiC MOS Structures Under Different Post‐Oxidation Annealing

ABSTRACT The electrical behavior of SiO 2 /4H‐SiC interfaces is a central challenge for the development of high‐efficiency MOSFETs, where trap states and interfacial structural distortions can affect carrier mobility and device reliability. In this work, we investigate thermally...