Du Li

Twist-Induced Out-of-Plane Ferroelectricity in Bilayer Hafnia

Abstract Ferroelectric HfO2 is a promising candidate for next-generation memory devices due to its CMOS compatibility and ability to retain polarization at nanometer scales. However, the polar orthorhombic phase responsible for ferroelectricity is metastable and requires extrinsi...

Anomalous stabilization of excitons by metallic proximity

Abstract Metallic environments are generally expected to suppress excitons through strong dielectric screening, yet their influence can differ in composite systems where metallic and insulating regions coexist. Here, we investigate excitonic states in Pd x Cu 1-x CrO 2 thin films...