Dabing Li

Balancing Carrier Cooling in InN/GaN Quantum Wells via Point Defect Engineering

ABSTRACT Hot‐carrier cooling asymmetry is a fundamental bottleneck in polar III‐nitride quantum wells, driving electron leakage and limiting radiative efficiency in light‐emitting devices (LEDs). Here we uncover a defect‐enabled strategy to symmetrize carrier relaxation in InN/Ga...