Д. М. Берча

Emission Properties of Wide InGaN/GaN Quantum Wells—Evidence for “Dark Charge” from Time-Resolved Photo- and Electroluminescence

InGaN/GaN quantum wells on polar substrates exhibit a pronounced quan-tum-confined Stark effect, which significantly limits their efficiency as light emitters. Surprisingly, this detrimental effect is significantly reduced when wider wells (above 10 nm) are used; their emission k...