D. Gogova

Epitaxial MgSnN 2 on 4H‐SiC (0001): An Earth‐Abundant Nitride for Green Optoelectronics and Photovoltaics

ABSTRACT Group II–IV‐Nitrides has emerged as a novel class of Earth‐abundant semiconductors. Owing to their tunable bandgaps these materials are attractive candidates for replacing expensive Ga‐based alloys in photovoltaics and green‐gap optoelectronics. In this work, epitaxial g...