Chunsheng Guo

Polarity Reversal of Dipole at the SiO2/HZO Interface in Ferroelectric Field-Effect Transistors by Oxygen Scavenging of TiN

Abstract Doped HfO2-based ferroelectric field-effect transistors (FeFETs) have attracted considerable attention for their potential in nonvolatile memory applications. Research on the dipole at the SiO2/HfO2-based ferroelectric interface is scarce. This study finds that the polar...