Chengxu Ge

Beyond Band-Edge Effective Mass: Ultrahigh On-State Current and Electron-Hole Transport Asymmetry in Monolayer PbS MOSFETs

Abstract Two-dimensional (2D) semiconductors are commonly evaluated for ultrascaled transistors using band-edge descriptors such as carrier effective mass. Here, first-principles quantum-transport simulations reveal pronounced electron-hole transport asymmetry in monolayer PbS MO...