Cheng‐Maw Cheng

Intrinsic Fermi Level Pinning and Reversible Depinning at Ultralow-Defect Epitaxial MoSe2/Au(111) Interfaces

Abstract Fermi level pinning (FLP) fundamentally limits contact engineering in two-dimensional semiconductors, yet its intrinsic origin remains obscured by the presence of interfacial disorder and defect-induced gap states. Although theoretical models attribute FLP to metal-induc...

Efficient power generation near room temperature in earth-abundant thermoelectric tin sulfide via lattice ordering

The inefficient carrier transport of earth-abundant tin sulfide (SnS), arising from its intrinsically low crystal symmetry, limits its thermoelectric performance at low temperatures. Here, the substitutional Ag+ doping modifies the Na-doped SnS crystal structure by reinforcing la...