Cheng‐Liang Huang

Enhanced resistive switching behavior in RF-sputtered Sm2Hf2O7 thin films through controlled process conditions

Sm 2 Hf 2 O 7 RRAM devices were developed via RF sputtering, and key factors including film thickness, thermal treatment, and post-metallization annealing were systematically evaluated in terms of their impact on switching characteristics. The pyrochlore structure of Sm 2 Hf 2 O...