Cheng Bin

Gate-tunable large second-order and third-order nonlinear Hall effect in topological insulator BiSbTeSe 2

The nonlinear Hall effect (NLHE) holds significant promise for next-generation electronic device applications, and it is essential to explore and engineer a strong and highly tunable NLHE. In this work, we report large second-order and third-order NLHEs in dual-gated BiSbTeSe2 de...