Chao Jin

Correlating photoluminescence spectra with electrical transport properties in defect-dependent β -Ga2O3 films

In this study, β-Ga2O3 thin films were fabricated on c-plane Al2O3 substrates using magnetron sputtering. As the film thickness increases from 80 to 380 nm, the in-plane crystalline domains show 120° rotation twinning, accompanied by an increase in the defect density. The defect...