C. Bouchard

Orbital and Spin–Orbit Torque Interplay in Ta/W-Based Magnetic Tunnel Junctions with Vertical Nonlocal Switching

Abstract Spin–orbit torque (SOT) enables ultrafast, energy-efficient magnetization switching, making it promising for MRAM cache applications. However, current SOT-MRAM devices face write efficiency limitations, with charge-to-spin conversion (ξDL) reaching only ∼ 45%, well below...