Byungwook Kim

Effect of Plasma Excitation Mode on Rutile TiO2 MIM Capacitors Grown on RuO2 Seed Electrodes

Maintaining low leakage current with high capacitance density in metal–insulator–metal (MIM) capacitors is essential for next-generation dynamic random-access memory (DRAM) scaling. Rutile TiO2 is a promising high-k dielectric; however, its narrow bandgap causes high leakage, whi...