Bin Hou

Quasi-Vertical GaN-Based Trench Gate MOSFETs Treated with Fluorine-Plasma

In this paper, a quasi-vertical GaN-based trench gate MOSFETs treated with F-plasma is proposed. The F-plasma-treated devices exhibit a breakdown voltage (Vbr) increased from 170 V to 275 V compared to the untreated devices. TCAD simulations reveal that F-plasma treatment signifi...