Baoshun Zhang

Room-temperature terahertz emission from N-polar GaN grating-gate high-electron-mobility transistors

Compact, electrically driven terahertz (THz) sources remain a major bottleneck for chip-scale spectroscopy, imaging and high-speed wireless links. AlGaN/GaN two-dimensional electron gas (2DEG) systems have been investigated for THz emission, but experimental demonstrations have a...