B. Pécz

Epitaxial MgSnN 2 on 4H‐SiC (0001): An Earth‐Abundant Nitride for Green Optoelectronics and Photovoltaics

ABSTRACT Group II–IV‐Nitrides has emerged as a novel class of Earth‐abundant semiconductors. Owing to their tunable bandgaps these materials are attractive candidates for replacing expensive Ga‐based alloys in photovoltaics and green‐gap optoelectronics. In this work, epitaxial g...

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H‐SiC MOS Structures Under Different Post‐Oxidation Annealing

ABSTRACT The electrical behavior of SiO 2 /4H‐SiC interfaces is a central challenge for the development of high‐efficiency MOSFETs, where trap states and interfacial structural distortions can affect carrier mobility and device reliability. In this work, we investigate thermally...