A. S. Doroshkevich

Investigations of Depth Profile of Native Oxide Layers Covering GaAs Implanted with Noble Gas by Rutherford Backscattering Spectroscopy with Nuclear Reaction

The samples employed in the investigation were semi-insulating GaAs wafers. Noble gas has been implanted using the UNIMAS ion implanter at energy 100 keV, fluence of 3 × 1015 ions/cm2. Rutherford backscattering spectroscopy with nuclear reaction analysis (RBS/NR) method was used...